as compared to the MOSFET. * The disadvantage of the MESFET structure is the presence of the Schottky metal gate. * It limits the forward bias voltage on the gate to the turn-on voltage of the Schottky diode. * This turn-on voltage is typically 0.7 V for GaAs Schottky diodes. * The threshold voltage therefore must be lower than this turn-on voltage. * As a result it is more difficult to fabricate circuits containing a large number of enhancement-mode MESFET. Basic structure
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Microcontroller Based Home Security A PROJECT REPORT ON “MICROCONTROLLER BASED HOME SECURITY SYSTEM” ABSTRACT Engineering is not only a theoretical study but it is a implementation of all we study for creating something new and making things more easy and useful through practical study. It is an art which can be gained with systematic study‚ observation and practice. In the college curriculum we usually get the theoretical knowledge of industries‚ and a little bit of implementation knowledge
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Interpretation of Results As observed by the group in a normal diode circuit placed in a forward bias generates a sinusoidal output wave. In order to trim the output waves‚ that are a sinusoidal wave‚ to be generated‚ a clipper circuit was made with the use of diodes. The limiting level of a clipper circuit is the barrier potential of the diode in use. A diode clipper that trims down the positive half cycle input of a wave signal is as positive limiter. The output signal will retain the original
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connected together‚ usually by soldering to a printed circuit board‚ to create an electronic circuit with a particular function (for example an amplifier‚ radio receiver‚ or oscillator). Components may be packaged singly (resistor‚ capacitor‚ transistor‚ diode etc.) or in more or less complex groups as integrated circuits (operational amplifier‚ resistor array‚ logic gate etc.) Components Very often electronic components are mechanically stabilized‚ improved in insulation properties and protected from
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I. Introduction a. Back ground of the Study Triac The TRIAC is a three terminal semiconductor device for controlling current. It gains its name from the term TRIode for AlternatingCurrent. It is effectively a development of the SCR or thyristor‚ but unlike the thyristor which is only able to conduct in one direction‚ the TRIAC is a bidirectional device. TRIAC The TRIAC is an ideal device to use for AC switching applications because it can control the current flow over both halves of
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rectification they are classified into two:- The single staged & multi staged. In the multi staged rectifiers‚ more than two diodes are used and these are used in the above-mentioned devices. The singled staged rectifier has only 2 diodes‚ the one we are to discuss in this project. The multi diode rectifier has only 2 diodes‚ the one we are to discuss in this project. The multi diode rectifiers has an efficiency ~ 94.6% while that of the single is only 81.2%. THEORY INVOLVED :- The input transformer
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TABLE OF CONTENTS 1. P-N JUNCTION DIODE CHARACTERISTICS 1 2. ZENER DIODE CHARACTERISTICS 6 3. TRANSISTOR COMMON -BASE CONFIGURATION 11 4. TRANSISTOR CE CHARACTERSTICS 16 6. FULL-WAVE RECTIFIER 26 7. FET CHARACTERISTICS 31 8. h-PARAMETERS OF CE CONFIGURATION 36 9. TRANSISTOR CE AMPLIFIER 43 10. COMMON COLLECTOR AMPLIFIER 48 11. RC COUPLED AMPLIFIER 53 12. COMMON SOURCE FET AMPLIFIER 58 13. WEIN BRIDGE OSCILLATOR 63 14. RC PHASE SHIFT OSCILLATOR 66 15. CURRENT-SERIES
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PONENTS 1. TRANSISTOR:-When a thin slice of p-type is sandwiched between two blocks of n-type‚ then n-p-n transistor is formed. It consists of emitter‚ base‚ and collector. In the project‚ common emitter n-p-n transistor ( BC-147 & SL-100) is used. 2. DIODE:- When a p-type
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Theory CONDUCTORS‚ INSULATORS AND CONDUCTIVITY Conduction of electricity in electric circuits takes place due to the presence of excess electrons in materials called conductors. Electrons move in the direction in which the potential has been applied. The ability of a conductor to conduct electricity is directly proportional to the material’s area of cross section and inversely proportional to its length. Where‚ G is conductance σ is conductivity A is area of cross section
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charge densities in a semiconductor‚ Fermi Dirac distribution‚ carrier concentrations and fermi levels in emiconductor‚ Generation and recombination of charges‚ diffusion and continuity equation‚ Mass action Law‚ Hall effect. UNIT 2: Junction diodes‚ Diode as a ckt. element‚ load line concept‚ clipping and clamping circuits‚ Voltage multipliers. Construction‚ characteristics and working principles of UJT UNIT 3: Transistor
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