SOLA3507/SOLA9002 Solar Cells School of Photovoltaic and Renewable Energy Engineering Lecture 13 – Review Dr Alison Lennon (Rm 127 TETB) SOLA3507-9002/13-1 Assignment and Quiz Marks • • Marks for on-time assignments (Assignment 2 and PG Assignment) should be available on BB by next Mon 9 am. Final quiz marks will be available on BB by Fri 14 June (hopefully sooner). Please check your mark and come and see me if you think it is wrong. PLEASE BRING MARKED COPIES OF YOUR QUIZZES WITH YOU
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Misr International University – Faculty of Engineering Electronics and Communications Department Subject: Solid State Electronic Devices Code: GEE 235 Sheet 2 pn Junction 1 Calculate the built-in potential barrier‚ Vbi‚ for Si. pn junction if it has the following dopant concentration at T = 300 K‚ ND = l014 cm -3‚ NA = 1017 cm-3‚ ni=1.5x1010 cm-3. 2 An abrupt
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Laboratory Handbook Stage 1 Semester 2 ENG1030M Electronics Applications Project Electronic Applications (ENG1030M) Module overview This laboratory based single module (100 hours total) consists of one 3 hour session per week and has 3 main parts. Each part involves practical and written work‚ these are shown below in chronological order. You should be advised that that the lab sessions use up 36 hours and therefore you will be expected to use the remaining 64 hours in background work
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semiconductors are simple-element semiconductor materials such as silicon or germanium. Silicon is the most common semiconductor material used today. It is used for diodes‚ transistors‚ integrated circuits‚ memories‚ infrared detection and lenses‚ light-emitting diodes (LED)‚ photosensors‚ strain gages‚ solar cells‚
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simultaneously. The DC voltage is variable from 0 to 10 volts. The frequency of square wave can be continuously varied from 800 to 1200 Hz. The front panel meter can read the Gunn voltage and the current drawn by the Gunn diode. The Power Supply is designed to protect Gunn diode from reverse
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ANNA UNIVERSITY CHENNAI: CHENNAI – 600 025 B.E DEGREE PROGRAMME (3 - 8 SEMESTERS) ELECTRICAL AND ELECTRONICS ENGINEERING (Offered in Colleges affiliated to Anna University) CURRICULUM AND SYLLABUS – REGULATIONS – 2004 SEMESTER III (Applicable to the students admitted from the Academic year 2006 – 2007 onwards) |THEORY |L |T |P |M | |1. |MA 1201
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independently tuning the effective Schottky barrier heights‚ a variety of reconfigurable device functionalities could be obtained. In particular‚ the same nanowire device could be configured to work as a Schottky barrier transistor‚ a Schottky diode or a p-n diode with tunable polarities. This versatility was eventually exploited to realize a NAND logic gate with gain well above one. Nanometer-scale electronic devices fabricated from silicon nanowires (SiNWs) are drawing significant attention in view
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Regulater • GSM • About The Sensors ▪ Gas Sensor ▪ Infraed Sensor ▪ Fire Sensor • Component Discription ▪ A . Microcontroller ▪ B . Transformer ▪ C Resistors ▪ D Capacitors ▪ E IC ▪ F Diodes •
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an ideal buck converter operating in continuous mode. The operation of the buck converter is fairly simple‚ with an inductor and two switches (usually a transistor and a diode) that control the inductor converter. In the idealised converter‚ all the components are considered to be perfect. Specifically‚ the switch and the diode have zero voltage drop when on and zero current flow when off and the inductor has zero series resistance. Further‚ it is assumed that the input and output voltages do not
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with many orders of magnitude variation in the load current; (c) operate efficiently at low output voltages (3.3 volts or less). Losses in a switch-mode converter can be classified as: loud dependent conduction losses (due to transistor onresistance‚ diode forward voltage drop‚ inductor
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