Future Silicon Integrated Technology
Multifunctional Devices and Logic Gates With Undoped Silicon Nanowires
Massimo Mongillo,1, a) Panayotis Spathis,1, b) Georgios Katsaros,1 Pascal Gentile,2 and Silvano De Franceschi1
1)
SPSMS/LaTEQS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France 2) SP2M/SINAPS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France
arXiv:1208.1465v1 [cond-mat.mes-hall] 7 Aug 2012
We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surrounding the silicide-silicon contact interfaces were proved to be effective in inducing a full suppression of the contact Schottky barriers, thereby enabling carrier injection down to liquid-helium temperature. By independently tuning the effective Schottky barrier heights, a variety of reconfigurable device functionalities could be obtained. In particular, the same nanowire device could be configured to work as a Schottky barrier transistor, a Schottky diode or a p-n diode with tunable polarities. This versatility was eventually exploited to realize a NAND logic gate with gain well above one. Nanometer-scale electronic devices fabricated from silicon nanowires (SiNWs) are drawing significant attention in view of their potential application in electronics1 , optoelectronics2 and biochemical sensing3,4 . The transport properties and the functionality of such electronic devices are usually controlled by doping. In most cases, the incorporation of doping impurities in SiNWs is obtained in-situ during nanowire growth5 , but a precise control over their spatial distribution6,7 and their activation8 has not been achieved yet. Doping control becomes a particularly
Massimo Mongillo,1, a) Panayotis Spathis,1, b) Georgios Katsaros,1 Pascal Gentile,2 and Silvano De Franceschi1
1)
SPSMS/LaTEQS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France 2) SP2M/SINAPS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France
arXiv:1208.1465v1 [cond-mat.mes-hall] 7 Aug 2012
We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surrounding the silicide-silicon contact interfaces were proved to be effective in inducing a full suppression of the contact Schottky barriers, thereby enabling carrier injection down to liquid-helium temperature. By independently tuning the effective Schottky barrier heights, a variety of reconfigurable device functionalities could be obtained. In particular, the same nanowire device could be configured to work as a Schottky barrier transistor, a Schottky diode or a p-n diode with tunable polarities. This versatility was eventually exploited to realize a NAND logic gate with gain well above one. Nanometer-scale electronic devices fabricated from silicon nanowires (SiNWs) are drawing significant attention in view of their potential application in electronics1 , optoelectronics2 and biochemical sensing3,4 . The transport properties and the functionality of such electronic devices are usually controlled by doping. In most cases, the incorporation of doping impurities in SiNWs is obtained in-situ during nanowire growth5 , but a precise control over their spatial distribution6,7 and their activation8 has not been achieved yet. Doping control becomes a particularly