2 pn Junction 1 Calculate the built-in potential barrier‚ Vbi‚ for Si. pn junction if it has the following dopant concentration at T = 300 K‚ ND = l014 cm -3‚ NA = 1017 cm-3‚ ni=1.5x1010 cm-3. 2 An abrupt silicon pn junction at zero bias has dopant concentration of Na = 1017 cm-3 and Nd = 5 x 1015 cm-3. T = 300 K. a. Calculate the Fermi level on each side of the junction (w.r.t) the intrinsic Fermi level. b. Sketch the equilibrium energy band diagram for the junction and determine
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Target Market Junction 8 has a wide range of target market‚ as there are many different tenants. One of its target markets is the people of center salary and family sections of the retail market that goes to Junction 8 for dining or a movie together with the family. The shopping mall also targets residents in nearby housing estates‚ office workers in the area and students from close-by schools aged from 7 to 65 years old. Positioning Location Strategy Junction 8 is placed in a high-density residential
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with the designed values. Chapter 1 Introduction: Bipolar Junction Transistor (BJT) is a three terminal device with three regions (Emitter‚ Base and Collector) and two PN junctions (Emitter-Base junction and Base-Collector junction). Since there are two junctions that means there are four possible ways of biasing a transistor. If both junctions are forward biased then the transistor will operate in the saturation region. If both junctions are reverse biased then the transistor will operate in the
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the order of microamperes‚ collector current is almost same as the emitter current in spite of the variations in the collector base junction. Another important expression for a CB transistor configuration is IC = αIE + ICBO ‚ where ICBO is the current flowing through the collector circuit when the collector base junction is reverse biased and emitter base junction is open circuited. Transistor offers a low input resistance and very high output impedance when it is in CB configuration. It provides
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The single-transistor inverter circuit illustrated earlier is actually too crude to be of practical use as a gate. Real inverter circuits contain more than one transistor to maximize voltage gain (so as to ensure that the final output transistor is either in full cutoff or full saturation)‚ and other components designed to reduce the chance of accidental damage. Shown here is a schematic diagram for a real inverter circuit‚ complete with all necessary components for efficient and reliable operation:
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11/24/2013 CLASSIFICATIONS of MATERIALS Semiconductor Theory a. Conductor b. Semiconductor c. Insulator • Number of valence electrons is 1-3 with very high conductivity • Number of valence electrons is 4 with intermediate conductivity • Number of valence electrons is 5-8 with very low conductivity Semiconductor Conductors • Has more electrons that are free to move • Supports charge carriers to flow • Support flow of electricity • Has very low resistance allowing
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Lovely Professional University‚Punjab Format For Instruction Plan [for Courses with Lectures and Tutorials Course No ece201 Cours Title ELECTRONIC DEVICES AND CIRCUITS Course Planner ECE201 ELECTRONIC DEVICES AND CIRCUITS 15330 :: Ishan Luthra Text Book: Other Specific Book: Lectures Tutorial Practical Credits 3 1 0 1 JACOB MILLMAN & HALKIAS‚ INTEGRATED ELECTRONICS: ANALOG & DIGITAL CIRCUIT SYSTEMS‚ Mc GRAW HILL‚ 1991 EDITION‚ 41 PRINT‚ 2005. 2 1. ROBERT
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controlled current flow. Germanium and Silicon is the two semi-conductor elements used for making it. There are two types of transistors such as POINT CONTACT and JUNCTION TRANSISTORS. Point contact construction is defective so is now out of use. Junction triode transistors are in many respects analogous to triode electron tube. A junction transistor can function as an amplifier or oscillator as
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Unit-II: MOS/BiCMOS Process Technology and Integration Introduction BiCMOS = CMOS + Bipolar (BJT) structures on the same substrate. Advantanges of CMOS device: 1. Low Power 2. High digital IC density. Advantages of Bipolar transistors: 1. Ability to deliver large drive currents 2. Capability to rapidly charge heavy loads. The implementation of digital bipolar circuits with emitter-coupled logic (ECL) gates permits small logic swings and excellent noise immunity
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A Zener diode is a diode which allows current to flow in the forward direction in the same manner as an ideal diode‚ but will also permit it to flow in the reverse direction when the voltage is above a certain value known as the breakdown voltage‚ "zener knee voltage"‚ "zener voltage" or "avalanche point". The device was named after Clarence Zener‚ who discovered this electrical property. Many diodes described as "zener" diodes rely instead on avalanche breakdown as the mechanism. Both types are
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