Mram
Contents
•Introduction. ……………………………………………………3
•What is MRAM? ………………………………………………4
•Methods of data storage………………………………….6
•Methods of data retrieval…………………………………9
•MRAM using AMR materials……………………………11
•MRAM using GMR materials……………………………14
•Competing Non-Volatile Memories…………………17
•MRAM Advantages and Applications……………….18
•Research and Developments…………………………….20
INTRODUCTION
In 1984 Drs. Arthur Pohm and Jim Daughton, both employed at that time by Honeywell, conceived of a new class of magneto resistance memory devices which offered promise for high density, random access, non volatile memory. In 1989 Dr. Daughton left Honeywell to form Non volatile Electronics, Inc. having entered into a license agreement allowing him tosublicense Honeywell MRAM technology for commercial applications. Dr.Pohm, Dr. Daughton, and others at NVE continued to improve basic MRAM technology, and innovated new techniques which take advantage of revolutionary advances in magneto resistive devices, namely giant magneto resistance and spin dependent tunnelling.
Today there is a tremendous potential for MRAM as a non volatile, solid state memory to replace flash memory and EEPROM where fast writing or high write endurance is required, and in the longer term as a general purpose read/write random access memory. NVE has a substantial patent portfolio containing 10 MRAM patents, and is willing to license these, along with 12Honeywell MRAM patents, to companies interested in manufacturing MRAM. In addition, NVE is considering internal production of certain niche MRAM products over the next several years.
WHAT IS MRAM?
MRAM is a non volatile random access memory which uses magnetic storage and Magneto resistance(MR) to read the stored data. Magneto resistive material is a resistor made of common ferromagnetic material which will change in resistance in the presence of a magnetic field. The magneto resistive property gives a small but sufficient signal to
•Introduction. ……………………………………………………3
•What is MRAM? ………………………………………………4
•Methods of data storage………………………………….6
•Methods of data retrieval…………………………………9
•MRAM using AMR materials……………………………11
•MRAM using GMR materials……………………………14
•Competing Non-Volatile Memories…………………17
•MRAM Advantages and Applications……………….18
•Research and Developments…………………………….20
INTRODUCTION
In 1984 Drs. Arthur Pohm and Jim Daughton, both employed at that time by Honeywell, conceived of a new class of magneto resistance memory devices which offered promise for high density, random access, non volatile memory. In 1989 Dr. Daughton left Honeywell to form Non volatile Electronics, Inc. having entered into a license agreement allowing him tosublicense Honeywell MRAM technology for commercial applications. Dr.Pohm, Dr. Daughton, and others at NVE continued to improve basic MRAM technology, and innovated new techniques which take advantage of revolutionary advances in magneto resistive devices, namely giant magneto resistance and spin dependent tunnelling.
Today there is a tremendous potential for MRAM as a non volatile, solid state memory to replace flash memory and EEPROM where fast writing or high write endurance is required, and in the longer term as a general purpose read/write random access memory. NVE has a substantial patent portfolio containing 10 MRAM patents, and is willing to license these, along with 12Honeywell MRAM patents, to companies interested in manufacturing MRAM. In addition, NVE is considering internal production of certain niche MRAM products over the next several years.
WHAT IS MRAM?
MRAM is a non volatile random access memory which uses magnetic storage and Magneto resistance(MR) to read the stored data. Magneto resistive material is a resistor made of common ferromagnetic material which will change in resistance in the presence of a magnetic field. The magneto resistive property gives a small but sufficient signal to
References: 1. Magneto resistive Random Access Memory by James M.Daughton, NVE Corporation. 2. Advanced MRAM Concepts by James M.Daughton, NVE Corporation. 3.M.N.Baibich,J.M.Broto,A.Fert,F.NguyenvanDau,F.Petroff,P.Eitenne,A.Friederich and J.Chazelas, "Giant Magneto resistance of (001)Fe/(001)Cr magnetic super lattices", Phys Rev Lett. , Vol 61, pp. 2472-2475, 1988