A Hybrid Nanomemristor or Transistor Logic Circuit Capable of Self-Programming
A hybrid nanomemristor/transistor logic circuit capable of self-programming
Julien Borghetti, Zhiyong Li, Joseph Straznicky, Xuema Li, Douglas A. A. Ohlberg, Wei Wu, Duncan R. Stewart, and R. Stanley Williams1
Information and Quantum Systems Lab, Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, CA 94304 Edited by Konstantin Likharev, State University of New York, Stony Brook University, and accepted by the Editorial Board December 19, 2008 (received for review July 9, 2008)
Memristor crossbars were fabricated at 40 nm half-pitch, using nanoimprint lithography on the same substrate with Si metaloxide-semiconductor field effect transistor (MOS FET) arrays to form fully integrated hybrid memory resistor (memristor)/transistor circuits. The digitally configured memristor crossbars were used to perform logic functions, to serve as a routing fabric for interconnecting the FETs and as the target for storing information. As an illustrative demonstration, the compound Boolean logic operation (A AND B) OR (C AND D) was performed with kilohertz frequency inputs, using resistor-based logic in a memristor crossbar with FET inverter/amplifier outputs. By routing the output signal of a logic operation back onto a target memristor inside the array, the crossbar was conditionally configured by setting the state of a nonvolatile switch. Such conditional programming illuminates the way for a variety of self-programmed logic arrays, and for electronic synaptic computing. crossbar integrated circuit memristor nanoimprint lithography
he memory resistor (memristor), the 4th basic passive circuit element, was originally predicted to exist by Leon Chua in 1971 (1) and was later generalized to a family of dynamical systems called memristive devices in 1976 (2). For simplicity in the exposition of this article, we will use the word ‘‘memristor’’ to mean either a ‘‘pure’’ memristor or a memristive device, because the distinction is not important in the context of the present
Julien Borghetti, Zhiyong Li, Joseph Straznicky, Xuema Li, Douglas A. A. Ohlberg, Wei Wu, Duncan R. Stewart, and R. Stanley Williams1
Information and Quantum Systems Lab, Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, CA 94304 Edited by Konstantin Likharev, State University of New York, Stony Brook University, and accepted by the Editorial Board December 19, 2008 (received for review July 9, 2008)
Memristor crossbars were fabricated at 40 nm half-pitch, using nanoimprint lithography on the same substrate with Si metaloxide-semiconductor field effect transistor (MOS FET) arrays to form fully integrated hybrid memory resistor (memristor)/transistor circuits. The digitally configured memristor crossbars were used to perform logic functions, to serve as a routing fabric for interconnecting the FETs and as the target for storing information. As an illustrative demonstration, the compound Boolean logic operation (A AND B) OR (C AND D) was performed with kilohertz frequency inputs, using resistor-based logic in a memristor crossbar with FET inverter/amplifier outputs. By routing the output signal of a logic operation back onto a target memristor inside the array, the crossbar was conditionally configured by setting the state of a nonvolatile switch. Such conditional programming illuminates the way for a variety of self-programmed logic arrays, and for electronic synaptic computing. crossbar integrated circuit memristor nanoimprint lithography
he memory resistor (memristor), the 4th basic passive circuit element, was originally predicted to exist by Leon Chua in 1971 (1) and was later generalized to a family of dynamical systems called memristive devices in 1976 (2). For simplicity in the exposition of this article, we will use the word ‘‘memristor’’ to mean either a ‘‘pure’’ memristor or a memristive device, because the distinction is not important in the context of the present