Part 1: NPN transistor Characteristics The Graph of Characteristics of NPN transistors Part 2: PNP transistor Characteristics The Graph of Characteristics of PNP transistors Part 3: Forward current gain and Early Voltage determination a) Using the data from SPA‚ plot the IC vs VCE characteristics of the npn and pnp transistors b) Determine‚ from the graph‚ the DC β and the early voltage for npn transistor at IC = 500µA c) Determine‚ from the graph‚ the
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devices 10 lectures – 5 classes Dr. K. Fobelets k.fobelets@imperial.ac.uk Taken from www.necel.com/process/en/ux6b_90nm_bicmos.html The course aims: (1) To review the operation of diodes and bipolar junction transistors. (2) To extend knowledge on bipolar devices to include the influence of recombination. (3) To investigate the physical mechanisms underlying the delays and speed limitations of the devices. (4) To extract equivalent circuit models for the devices
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MESFET * ThMESFET = Metal Semiconductor Field Effect Transistor = Schottky gate FET. * e MESFET consists of a conducting channel positioned between a source and drain contact region. * The carrier flow from source to drain is controlled by a Schottky metal gate. * The control of the channel is obtained by varying the depletion layer width underneath the metal contact which modulates the thickness of the conducting channel and thereby the current. * The key advantage of the
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6.8k‚ a 2N3904 NPN transistor. Equipment needed for measuring the input and the output signals are a function generator‚ an oscilloscope‚ multimeter and a +15V DC power supply. However‚ because this experiment is a simulation activity‚ Multisim simulator was used to conduct the experiment. B. Procedure To construct the amplifier circuit shown in fig. 1‚ connect the 56k and 5.6k resistors and the 0.33uF capacitor in parallel to the base terminal of the NPN transistor. After which‚ connect
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Reversible Gates using Pass Transistor Logic Md. Sazzad Hossain1‚ Md. Minul Hasan1‚ Md. Motiur Rahman1‚ A. S. M. Delowar Hossain1‚ Ziaul Haque2 1 Computer Science & Engineering‚ Mawlana Bhashani Science and Technology University 1 Santosh‚ Tangail-1902‚ Bangladesh University Grants Commission of Bangladesh Email: sazzad_101@yahoo.com‚ x.rajib.x@gmail.com 2 Abstract - In this paper‚ we propose a new design technique of reversible gates with N-MOS based pass transistor. The conventional reversible
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product LCD screen: which is single most expensive part of an ipad. it is 9.7 inch diagonal. its thin film transistor liquid-crystal display that supports 262‚000 colors. The screen of an Ipad is made by LG display‚ a south Korean company. It is shifted to china once it has been made. Flash memory chip: which is made out of millions of capacitors and transistors Battery: The iPad uses an internal rechargeable lithium-ion polymer (LiPo) battery. the outer case of the battery is
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decrease the customer bargaining power to increase their bargaining power by cooperating with each other. 4.2 Availability of Substitute Inputs LCD TV produces colour using active-matrix technology. An active-matrix display‚ also known as thin-film transistor (TFT) display has recently been replaced by using a newer type of TFT technology‚ which is the organic LED (OLED). It uses organic molecules that product a brighter and clearer display comparing to the standard TFT displays. Other than that‚ OLEDs
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valves which were once used in computers‚ radios‚ and TVs were replaced by transistors. Compared to thermionic valves transistors: ~Had much smaller sizes (miniaturization) ~Much cheaper and more reliable ~Used less power When transistors were first developed they were about 0.5 cm3 in volume It was found that transistors could also be miniaturized by using silicon doped with arsenic/gallium. Several million transistors could now be placed on area of 1cm3. This had enormous consequences for the
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B. OLSON ECE 407 Homework 1 Transistor sizing For this homework unless told otherwise refer to the AMI .5um process handout. Assume that VTP = -.94V and VTN = .79V. Assume that all transistors are biased in saturation. Determine the W/L ratio needed to bias an NMOS transistor with 50uA of current with Vdsat = .2V. Determine Vg if Vs = 0. [pic] Determine the W/L ratio needed to bias a PMOS transistor with 50uA of current with Vdsat = .2V. Determine Vg if
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