between the primitive unit vectors due to application of external strain has been taken into consideration to propose the approach. From our proposed model it is found that graphene under relaxed or symmetrical strain distribution is a zero bandgap semiconductor. However a band gap is opened as the asymmetrical strain is applied to it. It is seen that upto a certain level of strain (i.e. 12.2 % parallel to carbon-carbon bond and 7.3% perpendicular to carbon-carbon bond) the band gap of graphene increases
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electronic applications‚ such as bulk in size‚ slow operating speed etc. Carbon‚ Silicon and Germanium are belonging to the same group in the periodic table. They have four valance electrons in their outer shell. Pure Silicon and Germanium are semiconductors in normal temperature. So in the earlier days they are used widely for the manufacturing of electronic components. But later it is found that Germanium has many disadvantages compared to silicon‚ such as large reverse current‚ less stability towards
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values for the current and voltage respectively. The form of this dependence can be qualitatively explained by considering the tunneling processes that take place in a thin p-n junction. Figure 1. Figure 2. 174 For the degenerated semiconductors‚ the energy band diagram at thermal equilibrium is presented in Figure 2. In Figure 3 the tunneling processes in different points of the currentvoltage characteristic for the tunnel diode are presented. a) b) c) Figure 3. d) In
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the microchip‚ gave birth to a new technological field of modern microelectronics. His ingenious work at Texas Instruments over forty-five years ago‚ was a breakthrough that has led to the "sophisticated high-speed computers and large-capacity semiconductor memories of today ’s information age." Born on November 8‚ 1923 in Jefferson City‚ Missouri‚ Jack Kilby was a determined intellectual. After receiving a B.S. degree in Electrical Engineering from the University of Illinois‚ Mr. Kilby decided
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between 1961 and 1965.”[6] The nation’s space association was not the only customer of these innovative chips. One of the major new features provided by the U.S. Military’s Minuteman-II nuclear missile was an improved guidance system‚ incorporating semiconductor integrated circuits and miniaturized discrete electronic parts.[7] The Navy also took part in the revolution’s beginning. Their Northrop Grumman E-2 Hawkeye used integrated circuits in radar and radio communications to upgrade the aircraft’s performance
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Graphene nanoribbons (GNRs) ‚ on the other hand‚ are thin strips of graphene‚ whose electronic properties depend on the chirality of their edges and their width. Zigzag GNRs (ZGNRs) show metallic behavior‚ whereas armchair GNRs (AGNRs) are semiconductors with a band-gap inversely proportional to their width [1]. Therefore‚ AGNRs have been suggested recently as a channel material for transistors. For an optimal performance‚ the width (W) of the ribbons must be scaled down to 1-2 nm with an
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LIGHT DEPENDENT RESISTANCE INTRODUCTION In the society‚ some times street lights glow in day time due to any reason. In mines area people face many difficulties due to absence of light in the nights. In frontier and hilly areas‚ people face many problems due to damaged street lights. For solve above these problems‚ we create a device in which the lights glow in night and in day time‚ they off automatically and don’t glow. Due to use of it‚ we can solve above problems and can also save electricity
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TRANSISTOR The name is transistor derived from ‘transfer resistors’ indicating a solid state Semiconductor device. In addition to conductor and insulators‚ there is a third class of material that exhibits proportion of both. Under some conditions‚ it acts as an insulator‚ and under other conditions it’s a conductor. This phenomenon is called Semi-conducting and allows a variable control over electron flow. So‚ the transistor is semi conductor device used in electronics for amplitude. Transistor
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Misr International University – Faculty of Engineering Electronics and Communications Department Subject: Solid State Electronic Devices Code: GEE 235 Sheet 2 pn Junction 1 Calculate the built-in potential barrier‚ Vbi‚ for Si. pn junction if it has the following dopant concentration at T = 300 K‚ ND = l014 cm -3‚ NA = 1017 cm-3‚ ni=1.5x1010 cm-3. 2 An abrupt
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Silicon-Germanium Heterojunction Bipolar Transistors --An idea whose time has come Ankit Goyal‚ IIT Roorkee Tutor: Prof. S. Kal‚ IIT Kharagpur Presentation Overview History‚ need of SiGe Technology Physics behind HBTs Bandgap Engineering SiGe Strained Layer Epitaxy SiGe HBT Fabrication: Selective-Epitaxial Growth Technology aspects Some applications of Si-Ge HBTs Future Trends and conclusions 2 Silicon-Germanium Heterojunction Bipolar Transistor Saturday‚ December 15‚ 2007
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