Direct Hits Toughest Vocabulary of the SAT: Volume 2 2011 Edition By Larry Krieger Edited by Ted Griffith This copy belongs to: Copyright © 2011 by Direct Hits Publishing All Rights Reserved. No part of this book may be reproduced in any form or by any electronic or mechanical means‚ including information storage and retrieval systems‚ without permission in writing from the publisher‚ except by a reviewer who may quote brief passages in a review. For more information‚ please contact us
Premium SAT ACT
Physical and Materials Constants Boltzmann ’s constant Electron charge Thermal voltage k q kT/q 1.38 x 10-23 1.6 x 10-19 0.026 (at T= 300 K) 1.12 (at T = 300 K) J/K C V Energy gap of silicon (Si) Eg eV Intrinsic carrier concentration of silicon (Si) ni 1.45 x 1010 (at T = 300 K) cm73 Dielectric constant of vacuum Dielectric constant of silicon (Si) Dielectric constant of silicon dioxide (SiO2 ) 60 8.85 x 10-14 F/cm ESi 11.7 x O F/cm 6.x 3.97 x EO F/cm Commonly Used Prefixes
Premium Transistor MOSFET Integrated circuit
C:\WINDOWS\DESKTOP\sf1.htm To my sister Janice‚ Who taught me how to read‚ Which was the beginning of wisdom‚ And how to be charitable‚ Which is wisdom’s end. About the Author No one had ever won both the Hugo and the Nebula Award for best science fiction novel two years in a rowuntil 1987‚ when Speaker for the Dead won the same awards given to Ender’s Game. But Orson Scott Card’s experience is not limited to one genre or form of storytelling. A dozen of his plays have been produced
Premium Science fiction