Vivek kr. Garg , Prateek sain, Vivek Tyagi ,Piyush Sharma firstname.lastname@example.org, email@example.com
Albert Einstein first proved that each molecule measures about a nanometer (a billion of a meter) in diameter. And in 1959, it was Richard P. Feynman who predicted a technological world composed of self-replicating molecules whose purpose would be the production of nano-sized objects. Almost a hundred years after Einstein 's insight and 40 years after Feynman 's initial proposition, the nanometer scale looms large on the research agenda. The semiconductor industry is edging closer to the world of Nanotechnology where components are miniaturized to the point of individual molecules and atoms. Nanotechnology broadly refers to the manipulation of matter on the atomic and molecular scales. This technology enables creation of things one atom or molecule at a time. The possibilities with nanotechnology are enormous and are of great benefit to us. Nanotechnology deals with creation of materials, devices and systems in the nanometer scale (1-100 nm) through manipulating matter at that scale and exploiting novel properties arising because of the nanoscale. This paper describes about the implementation of Nanotechnology to different areas of nano wire, how the nano wires can put their effect in day to day life of human beings or on technology.
Keywords: silicon, nanowire, optical properties, absorption, reflection.
I. INTRODUCTION OF NANO WIRE:
Nanotechnology deals with creation of materials, devices and systems through manipulation of matter at the nanometer length scale. The object created itself does not have to be nanoscale, but can be micro or macro size. What is critical is the ability to exploit the novel properties that arise because of nanometer length scale. Indeed when we go down from bulk to nanoscale, physical, chemical, mechanical, electrical, optical, magnetic and other properties change. The field is about making
References:  A. Luque and A. Mart´ı, “Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels,” Phys. Rev. Lett., vol. 78, pp. 5014–5017, Jun. 1997.  S. M. Hubbard, C. Bailey, S. Polly, C. Cress, J. Andersen, D. Forbes, And R. Raffaelle, “Nanostructured photovoltaics for space power, J.Nanophoton” vol. 3, pp. 031880-1–031880-16, 2009. . Kayes, B. M., Atwater, H. A. & Lewis, N. S. Comparison of the device physics Principles of planar and radial p_n junction nanorod solar cells. J. Appl. Phys.97, 114302_114311 (2005). [6.1]. Putnam, M. C. et al. 10 _m minority-carrier diffusion lengths in Si wires synthesized by Cu-catalyzed vapor_liquid_solid growth. Appl. Phys. Lett. 95,163116 (2009). [6.2]Kelzenberg, M. D. et al. Photovoltaic measurements in single-nanowire silicon solar cells. Nano Lett. 8, 710_714 (2008). . Kelzenberg, M. D. et al. Proc. 33rd IEEE Photovoltaic Specialists Conference 1_6 (IEEE, 2008). . Kayes, B. M. et al. Growth of vertically aligned Si wire arrays over large areas (>1 cm2) with Au and Cu catalysts. Appl. Phys. Lett. 91, 103110_103113 (2007). . Plass, K. E. et al. Flexible polymer-embedded Si wire arrays. Adv. Mater. 21,325_328 (2009).