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Modeling of Closed-Loop Voltage-Mode Controlled Interleaved Dual Boost Converter

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Modeling of Closed-Loop Voltage-Mode Controlled Interleaved Dual Boost Converter
Computers and Electrical Engineering 29 (2003) 67–84 www.elsevier.com/locate/compeleceng Modeling of closed-loop voltage-mode controlled interleaved dual boost converter
Mummadi Veerachary, Tomonobu Senjyu *, Katsumi Uezato
Department of Electrical and Electronics Engineering, Faculty of Engineering, University of the Ryukyus, 1 Senbaru,
Nishihara-cho, Nakagami, Okinawa 903-0213, Japan
Received 24 July 2000; accepted 9 January 2001

Abstract
An extensive small-signal analysis of a voltage-mode controlled interleaved dual boost (IDB) converter operating in continuous current mode based on signal flow graph approach is proposed. Small-signal flow graph is developed, from which open-loop small-signal transfer functions are derived using well known
Mason’s gain formula. Closed-loop small-signal input-to-output, control-to-output transfer functions are also derived and frequency response characteristics are determined at different duty ratios. Voltage-mode compensator designed using K-factor approach is used for closed-loop operation of IDB converter. Load voltage regulation against supply voltage and load disturbances are demonstrated through experimental results. Ó 2002 Elsevier Science Ltd. All rights reserved.
Keywords: Interleaved dual boost converter; Small-signal analysis; K-factor; Voltage-mode control

1. Introduction
PWM boost dc–dc converters are some of the simplest power electronic circuits. They are widely used in regulated power supplies and also in specialized high power applications such as dc motor drives, battery chargers, plating and welding [1,2]. However, the conventional boost converters have the disadvantages of high ripple content both in the source and load current waveforms, possibility of entering into discontinuous current mode at low switching frequencies, loads etc. To overcome some of these problems, dc–dc converters are frequently paralleled to reduce the ripple content, increase the power processing capability



References: Tomonobu Senjyu was born in Saga prefecture, Japan, on May 2, 1963. He received the B.S. and M.S. degrees in electrical engineering from University of the Ryukyus, Okinawa, Japan, in 1986 and 1988, respectively, and Katsumi Uezato was born in Okinawa prefecture, Japan, on February 5, 1940. He received the B.S. degree in electrical engineering from the University of the Ryukyus, Okinawa, Japan, in 1963, the M.S

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