HX316C10F 4

Topics: DDR SDRAM, Dynamic random access memory, DIMM Pages: 2 (420 words) Published: January 28, 2015
HX318C10FB/4

HX316C10F/4
4GB 512M x 64-Bit DDR3-1600
CL10 240-Pin DIMM

SPECIFICATIONS
CL(IDD)

10 cycles

Row Cycle Time (tRCmin)

48.125ns (min.)

Refresh to Active/Refresh
Command Time (tRFCmin)

260ns (min.)

Row Active Time (tRASmin)

37.5ns (min.)

Maximum Operating Power

TBD W*

UL Rating

94 V - 0

Operating Temperature

0o C to 85o C

Storage Temperature

-55o C to +100o C

*Power will vary depending on the SDRAM used.

DESCRIPTION

FEATURES

HyperX HX316C10F/4 is a 512M x 64-bit (4GB) DDR3-1600
CL10 SDRAM (Synchronous DRAM) 1Rx8 memory module,



JEDEC standard 1.5V (1.425V ~1.575V) Power Supply



VDDQ = 1.5V (1.425V ~ 1.575V)

based on eight 512M x 8-bit DDR3 FBGA components. This
module has been tested to run at DDR3-1600 at a low latency



800MHz fCK for 1600Mb/sec/pin

timing of 10-10-10 at 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section below. The



8 independent internal bank

JEDEC standard electrical and mechanical specifications are
as follows:



Programmable CAS Latency: 11, 10, 9, 8, 7, 6



Programmable Additive Latency: 0, CL - 2, or CL - 1 clock



8-bit pre-fetch



Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]



Bi-directional Differential Data Strobe



Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)



On Die Termination using ODT pin



Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C



Asynchronous Reset



PCB : Height 1.180” (30.00mm), single sided component

Note: The PnP feature offers a range of speed and timing options to support the widest variety of processors and chipsets. Your maximum speed will be determined by your BIOS.

PnP JEDEC...
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