# Hall Effect

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Electrical Engineer
Product Fabrication
SemiTech

Mr. Mark Benjamin
Engineer
SemiTech

Dear Mr. Mark Benjamin

This is the report for analyzing and recommends dope silicon for our company. In the report, I use the right-hand rule to determine the direction of the magnetic field, force acting in charge and the direction of moving charges.

After that I use several equations to calculate the carrier concentration, hall coefficient, of the sample. It is an n-type semi-conductor. The resistance of the sample is 1.756 kΩ. The carrier concentration is 1.543*1017 Carriers / cm3. The Hall Mobility is 1.543*1017 Carriers / cm3. The RH equals to -40.5 ohm.

The carrier concentration of my example is 1.543*1017 Carriers / cm3, compared to the estimate number, my result is slightly smaller. Compare to the experimental mobility to the mobility of carriers in doped silicon, my example’s value is smaller than the doped silicon. As a result, compare to the experimental mobility to the mobility of carriers in doped silicon, my example’s value is smaller than the doped silicon. I think we need to ask the factory to increase the sample’s carrier concentration.

Yours sincerely,

Jingxuan Xia

Introduction:

The purpose of my research is to analyze the doped silicon so that I can choose a perfect-doped silicon, which has high quality as well as reasonable prices.

Scientific Concepts and Theories

The Hall effect is the production of a voltage difference across an electrical conductor, transverse to an electric current in the conductor and a magnetic field perpendicular to the current.

In this experiment, I use the Hall effect as a method to measure the amount and type of carriers present in semiconductors.

From the figure above, we can conclude that when we add a magnetic field in a z direction we found that there is a transverse field Ex and the magnetic field Bz, which is in the y direction. After that, put a voltmeter across it, gives the reading

References: S.O. Kasap. Electrical Engineering Materials and Devices (2000), Chapter 2.5 http://electronicmaterials.usask.ca/. March 2012. B.G. Streetman, Solid State Electronic Devices (1995), Chapter 3.4.5. This is the text used for EE 128.

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