1. P-N JUNCTION DIODE CHARACTERISTICS 1 2. ZENER DIODE CHARACTERISTICS 6 3. TRANSISTOR COMMON -BASE CONFIGURATION 11 4. TRANSISTOR CE CHARACTERSTICS 16 6. FULL-WAVE RECTIFIER 26 7. FET CHARACTERISTICS 31 8. h-PARAMETERS OF CE CONFIGURATION 36 9. TRANSISTOR CE AMPLIFIER 43 10. COMMON COLLECTOR AMPLIFIER 48 11. RC COUPLED AMPLIFIER 53 12. COMMON SOURCE FET AMPLIFIER 58 13. WEIN BRIDGE OSCILLATOR 63 14. RC PHASE SHIFT OSCILLATOR 66 15. CURRENT-SERIES FEEDBACK AMPLIFIER 71 16. VOLTAGE-SERTES FEEDBACK AMPLIFIER 77 17. HARTLEY OSCILLATOR 83 18. COLPITT’S OSCILLATOR 87 19. SILICON-CONTROLLED RECTIFIER(SCR) CHARACTERISTICS 91 20. UJT CHARACTERISTICS 95 21. BRIDGE RECTIFER 99
1. P-N JUNCTION DIODE CHARACTERISTICS
AIM:-To observe and draw the Forward and Reverse bias V-I Characteristics of a P-N Junction diode.
P-N Diode IN4007. Regulated Power supply (0-30v) Resistor 1KΩ Ammeters (0-200 mA, 0-500mA) Voltmeter (0-20 V) Bread board Connecting wires
A p-n junction diode conducts only in one direction. The V-I characteristics of the diode are curve between voltage across the diode and current through the diode. When external voltage is zero, circuit is open and the potential barrier does not allow the current to flow. Therefore, the circuit current is zero. When P-type (Anode is connected to +ve terminal and n- type (cathode) is connected to –ve terminal of the supply voltage, is known as forward bias. The potential barrier is reduced when diode is in the forward biased condition. At some forward voltage, the potential barrier altogether eliminated and current starts flowing through the diode and also in the circuit. The diode is said to be in ON state. The current increases with increasing forward