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Device Fabrication: Development of a Nano-Contact Platform

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Device Fabrication: Development of a Nano-Contact Platform
Introduction
The fabrication techniques nowadays have many limitation, open up the new opportunity for scientists to build device that required less time for fabrication, higher performance and low power consumption. The advantage of the use of molecules is that they can be synthesized with almost unlimited variations, this allows for the development of many electronic devices.
Many theoretical molecular configurations have been demonstrated as rectifiers, memories or transistors, in reality it is very difficult to build the stable electrical device based on one or few molecules. A major obstacle is to obtain reliable junctions between the electrical contacts and a single or a few molecules. The surface metallic molecules can either be chemisorbed or physisorbed, resulting from van der Waals force. The electrical properties of the molecules can be determined by testbeds, scanning tunneling microscopy (STM), conducting probe atomic force microscopy, STM break junctions and mechanical break junctions. But for now these still cannot provide an opportunity to prepare a working MED that could be used in applied set-ups. There are some considerable variations in measurements obtained from measurement platform, which are a large extent related to variations in the metal molecule interface. This paper uses nanoelectrode/nanoparticle-bridge platform to provide a stable foundation for a MED, the electrical characterization carried out on 1-alkanethiols which are considered as model molecules in MEDs. The conduction properties of molecular junction with four different configurations based on 1-alkanethiol physisorption and chemisorption on Au surfaces, represented in this paper.

Device Fabrication
In this paper they have developed a nano-contact platform, with empty-gap resistances above 1000TΩ by using top-down approach fabrication techniques (Electron beam lithography and ion beam milling) with varied gap size between 10 and 30 nm. As shown in Fig. 1 a, these gaps

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