The Most Adventurous Day of Your Life

Only available on StudyMode
  • Download(s) : 2893
  • Published : March 31, 2011
Open Document
Text Preview
UNISONIC TECHNOLOGIES CO., LTD S8050
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
DESCRIPTION
The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. 1

NPN SILICON TRANSISTOR

FEATURES
* Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to S8550 Lead-free: S8050L Halogen-free: S8050G TO-92

ORDERING INFORMATION
Normal S8050-xx-T92-B S8050-xx-T92-K Order Number Lead Free Plating S8050L-xx-T92-B S8050L-xx-T92-K Halogen Free S8050G-xx-T92-B S8050G-xx-T92-K Package TO-92 TO-92 Pin Assignment 1 2 3 E B C E B C Packing Tape Box Bulk

www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd

1 of 4
QW-R201-013.B

S8050

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current Ic 700 mA Collector Dissipation(Ta=25°C) Pc 1 W Junction Temperature TJ 150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO Ic=100μA, IE=0 Collector-Emitter Breakdown Voltage BVCEO Ic=1mA, IB=0 Emitter-Base Breakdown Voltage BVEBO IE=100μA, Ic=0 Collector Cut-Off Current ICBO VCB=30V, IE=0 Emitter Cut-Off Current IEBO VEB=5V, Ic=0 hFE1 VCE=1V, Ic=1mA DC Current Gain hFE2 VCE=1V, Ic=150 mA hFE3 VCE=1V, Ic=500mA Collector-Emitter Saturation Voltage VCE(SAT) Ic=500mA, IB=50mA Base-Emitter Saturation Voltage VBE(SAT) Ic=500mA, IB=50mA Base-Emitter Saturation Voltage VBE VCE=1V, Ic=10mA Current Gain Bandwidth Product fT VCE=10V, Ic=50mA Output Capacitance Cob VCB=10V, IE=0, f=1MHz MIN 30 20 5 TYP MAX UNIT V V V μA nA

1 100 100 120 40 110 400 0.5 1.2 1.0 100 9.0

V V V MHz pF

CLASSIFICATION OF hFE2
RANK RANGE C 120-200 D 160-300 E 280-400

UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw

2 of 4
QW-R201-013.B

S8050
TYPICAL CHARACTERISTICS

NPN SILICON TRANSISTOR

0.5 Collector Current, Ic (mA) 0.4 0.3 0.2 0.1 0

Static Characteristics IB=3.0mA IB=2.5mA IB=2.0mA IB=1.5mA IB=1.0mA IB=0.5mA DC current Gain, hFE

103

DC Current Gain VCE=1V

102

101

0 0.4 0.8 1.2 1.6 2.0 Collector-Emitter Voltage, VCE ( V) Base-Emitter on Voltage

100 -1 10

100 101 102 103 Collector Current, Ic (mA) Saturation Voltage

10 Collector Current, Ic (mA)

2

10 Saturation Voltage (mV) VCE=1V

4

Ic=10*IB VBE(SAT)

101

103

100

102 VCE(SAT) 101 -1 10 100 101 102 103

10-1 0

0.2

0.4

0.6

0.8

1.0

Base-Emitter Voltage, VBE (V) Current Gain-Bandwidth Product Current Gain-Bandwidth Product, fT (MHz)

Collector Current, Ic (mA) Collector Output Capacitance 103 Capacitance, Cob (pF)

103 VCE=10V 102

10

2

f=1MHz IE=0

101

101

100 0 10

101 102 103 Collector Current, Ic (mA)

100 0 10

101 102 103 Collector-Base Voltage (V)

UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw

3 of 4
QW-R201-013.B

S8050

NPN SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner....
tracking img