Interface Trap Density of Mos, Raquibul Hassan, Mohammed Tawsif Salam, 2011

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  • Topic: MOSFET, Silicon, Transistor
  • Pages : 25 (7717 words )
  • Download(s) : 91
  • Published : December 6, 2012
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Raquibul Hassan
061310045

M. Tawsif Salam
061069045

Instructor

Dr. K.M.A. Salam

NORTH SOUTH UNIVERSITY
Dhaka, Bangladesh

ASSERTION

This is to state that this project is entirely our original work. No part of this work has been submitted elsewhere fully or partially for the award of any other degree or diploma. In addition we assure that any material reproduced in this project has been properly acknowledged. Students‘ Name and Signature

__________________________ Raquibul Hassan ID: 061310045

__________________________ M. Tawsif Salam ID: 061069045

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APPROVAL

The project tilted Measurement of Interface Trap Density of MOS has been submitted to the following respected members of the Board of Examiners of the department of Electrical Engineering & Computer Science in partial fulfillment of the requirements for the degree of Bachelor of Science in Electronics and Telecommunication Engineering on the December 30, 2009 by the following students has been accepted satisfactory. Raquibul Hassan M. Tawsif Salam (061310045) (061069045)

_____________________________ Dr. K.M.A. Salam
Assistant Professor Department of Electrical Engineering & Computer Science North South University (Advisor)

_____________________________ Dr. Miftahur Rahman
Professor and Chairman Department of Electrical Engineering & Computer Science North South University

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ABSTRACT

In our research work we are to make attempt to find out the interface trap density parameters of the extensively used oxides in semiconductor devices, followed by the effort to show a comparison between those of the oxides. We are to work on different high-k materials like hafnium dioxide, aluminium oxide, titanium dioxide, hafnium silicate and compare the properties with silicon dioxide to reach a conclusion that which of these materials would be the most favorable with respect to the parameters concerning interface trap density Dit to perform certain operations i.e. device scaling.

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ACKNOWLEDGEMENT

We are thankful to Almighty Allah SWT at the first place. We would also like to mention the love and support of our families, that of our parents in particular, without which we could not have been somewhere near to the completion. Our deepest gratitude is to our academic and advisor Dr. K.M.A. Salam whose kind thoughts were always with us. Mentions of our work to all extents would rightfully have to have his name too without whose help we could not have overcome a number of obstacles we had faced. We would like to express our deepest gratitude to Professor Dr. Miftahur Rahman, the chairman of the Department of Electrical Engineering & Computer Science, for his kind guidance over the topic and areas of our research at the initial stage. Among the others we would like to thank, there is Syed Nafeesul Islam who was always there when we needed a help. Many others of our well-wishers were there who are not being named all here for understandable reasons, but we cannot do without mentioning them to acknowledge their help and support and we wish every good to them.

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TABLE OF CONTENTS
      Assertion ---------------------------------------------------------------------------------------------- 2 Approval ---------------------------------------------------------------------------------------------- 3 Acknowledgement ----------------------------------------------------------------------------------- 4 Abstract ------------------------------------------------------------------------------------------------ 5 List of Figures ---------------------------------------------------------------------------------------- 6 List of Tables ----------------------------------------------------------------------------------------- 7

Chapter 1

Introduction ---------------------------------------------------------------------------------------------- 9 Chapter 2

Background & Review...
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