Kannur University Syllabus

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KANNUR UNIVERSITY
FACULTY OF ENGINEERING
Curricula, Scheme of Examinations & Syllabus for
Semesters VII & VIII of B.Tech. Degree Programme in
Electronics & Communication Engineering with effect from
2007 Admissions
SEVENTH SEMESTER
Code Subject Hours/Week
Sessional
Marks
University
Examination
L L T P/D Hrs Marks
2K6 EC 701 Microelectronics Technology 3 1 - 50 3 100
2K6 EC 702 Microwave Engineering 3 1 - 50 3 100
2K6 EC 703 Information Theory and Coding 3 1 - 50 3 100
2K6 EC 704 Television Engineering 3 1 - 50 3 100
2K6 EC 705 Elective II 3 1 - 50 3 100
2K6 EC 706(P) Simulation Lab - - 3 50 3 100
2K6 EC 707(P) Communication Engineering Lab –II - - 3 50 3 100 2K6 EC 708(P) Mini Project - - 4 50 - -
2K6 EC709(P) Physical Education, Health & Fitness - - - 50 - - TOTAL 15 5 10 450 - 700
Elective II
2K6 EC 705 (A) - Probability and Random Process
2K6 EC 705 (B) - Satellite Communication
2K6 EC 705 (C) - Soft Computing
2K6 EC 705 (D) - R F System Design
2K6 EC 705 (E) -Industrial Electronics
2K6 EC 705 (F) - Data Compression
EIGHTH SEMESTER
*25 Marks is allocated for Industrial Training
Elective III
2K6 EC 805( A) – Advanced Digital Signal Processing
2K6 EC 805( B) – Digital Image Processing
2K6 EC 805 (C) –Communication Switching Systems
2K6 EC 805 (D) – Embedded System
2K6 EC 805 (E )– Secure Communications
2K6 EC 805(F )– Optimization Techniques
Code Subject Hours/Week Sessional
Marks
University
Examination
L T P/D Hrs Marks
2K6 EC 801 Radar and Navigation 3 1 - 50 3 100
2K6 EC 802 Optical Communication 3 1 - 50 3 100
2K6 EC 803 Computer Communication &
Networking 3 1 - 50 3 100
2K6 EC 804 Wireless Mobile Communication 3 1 - 50 3 100
2K6 EC 805 Elective III 3 1 - 50 3 100
2K6 EC 806(P) Seminar - - 4 50 - -
*2K6 EC 807(P) Project & Industrial Training - - 6 100 - -
2K6 EC 808(P) Viva Voce - - - - - 100
TOTAL 15 5 10 400 - 600
Aggregate marks for 8 semesters = 8400 3000 5400
2K6 EC 701: MICROELECTRONICS TECHNOLOGY
3 hours lecture and 1 hour tutorial per week
Module 1 (12 hours)
Crystal growth and wafer preparation: - Diffusion of impurities - Flick’s I and II law of diffusion-Ion implantation. Oxidation - deal-grove method Optical lithography - Modulation transfer function. Photo resists - types. Chemical vapor deposition (CVD) - Epitaxial growth. Etching - wet plasma & ion etching. Contacts & Metallization: - Schottky contacts & Implanted ohmic contacts.

Module 2 (12 hours)
MOS transistor: - Depletion & Enhancement types - Threshold voltage-NMOS inverter - various pull-ups - CMOS & BiCMOS inverter.
Introduction to IC technology: - Bipolar technology - Early bipolar & advanced bipolar processes. MOS technology: - NMOS, PMOS, CMOS, BiCMOS technologies, n well, p well, twin tub process. Hot carrier effects in BJT & CMOSLatch up in CMOS

Module 3 (15 hours)
VLSI design fundamentals :- MOS layers-Stick diagrams - NMOS& CMOS design styles - Layouts – lambda based design rules - 2 micro meter design rules - Diagrams for NMOS & CMOS inverters & gates - Simple Combinational Logic Design (half & full adders, multiplexers ).

Module 4 (13 hours)
Device isolation: - Junction & oxide isolation – LOCOS, SILO,SWAMI process - Trench isolation - Silicon on insulator isolation.
Introduction to nanotransistors – Energy level diagram- Fermi function- ohms law in nanometer scaled devices-electron and spin transport- current in a one level model- potential profile-ballistic nanotransistors – nanotransistors with scattering.

Text Books
1. The Science & Engineering of Microelectronics Fabrication: - Stephan A Campbell. 2. Basic VLSI Design: - Douglas A Pucknell & Kamran Eshraghian – PHI Third Edition, 2004 3. VLSI technology :- Sze S.M – MGH

Reference Books
1. Quantum Transport: Atom to Transistor: - S.Dutta – Cambridge University Press 2. Electronic Transport in Mesosiopic Systems: - S.Dutta – Cambridge University Press 3. Solid-state Physics: - Aschroft and Meizmin

4. Principle of...
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