Cmos and Digital Design

Only available on StudyMode
  • Topic: CMOS, Transistor, MOSFET
  • Pages : 998 (187375 words )
  • Download(s) : 16
  • Published : February 10, 2013
Open Document
Text Preview
Physical and Materials Constants

Boltzmann's constant Electron charge Thermal voltage

k q kT/q

1.38 x 10-23 1.6 x 10-19 0.026 (at T= 300 K) 1.12 (at T = 300 K)

J/K

C
V

Energy gap of silicon (Si)

Eg

eV

Intrinsic carrier concentration of silicon (Si)

ni

1.45 x 1010 (at T = 300 K)

cm73

Dielectric constant of vacuum Dielectric constant of silicon (Si) Dielectric constant of silicon dioxide (SiO2 )

60

8.85 x 10-14

F/cm

ESi

11.7 x O

F/cm

6.x

3.97 x EO

F/cm

Commonly Used Prefixes for Units
giga mega kilo milli micro nano pico femto G M k m In n p f
109 106 103

10-3
10-6 10-9 10-12
10-15

second edition

CMO S DIGITAL INTE GRATE D CI RCUITS
Analysis and Design
SUNG-MO (STEVE) ANG
University of Illinois at Urbana- Champaign

YUSUF LEBLEBIGI
Worcester Polytechnic Institute Swiss Federal Institute of Technology-Lausanne

U

McGraw-Hill.*

Boston Burr Ridge, IL Dubuque, IA Madison, WI New York San Francisco St. Louis Bangkok Bogota Caracas Lisbon London Madrid Mexico City Milan New Delhi Seoul Singapore Sydney Taipei Toronto

Copyrighted Material

McGmlfl-Hill Higher Education
TliJRD EDITION

A Division of'f1tt' M:Ora•·H ill Omtpanics

sz

CMOS DIGITAL lNTEORATEO CIRCUITS: ANALYSIS ANDD€SIGN

Pi•blislled by McGr:t\\o'·HiU. a businCS.'!unil o(The McOrnw·Hill Comp:mic s. Inc.. 122 I Avenue oftheAtnericas, N ew YO•'k, NY 10020. Copyrighl() 2003. 1999, 1996 by The McOrsw-Hill Companies, loc. All rights �!laved. No Jllll't of lhis publkation muy be reproduooc.l or di�triboted

in My form or by any means. or stored in l.ll.iatilbi•St Of teltleval systenl. wi thout the prior wr inw

consent o(The McCr-.1w·Hill Co.npanks. Inc .. including. but oot limih!d t(), in any nctviotk or ()(her electronic SlorlgC or I.Jnnsm•ssion. ()r bl'l);ui�M for distance lenming. Some: ;uKiUaries, inc-luding electronic and prim compoDCnts. nl:l)' n(lt bt ;h';lll:d)IC to eusaomcrs ouiSide the United Stutt5.

Tbi$ boot Is r-imed on acid·froc PQper. Jntcmational Po n�oestic 2 J4 56 7 8 90 QPF/QP1'09 8765 4 3 2 3-1 56 7 8 9 0 QPF/QPF 0 98 7 6 S 4 3

ISBN G-07-246053-9 ISBN �-119644-7(1SE) PuhU:Ulet: Ell:.aMthA. Jones Senior t.])OOIIOrint,edil(lr: Crul;�ePmllwlt Developmenlal editor: Mklr�:.llt: 1... f.'l(»f'U'rdwfi

Executive marketing manager: John UlmnemtKI!er
Senior project manager: Ro.�e Koos

Produe1ion super '\'i.SQf': S/t crry {... Kcme Media projce1manager. Jodi K. & 1 0'n'rt. t1 .. Senior media technol�y producer: Plt llllp MNk

i o l'tlt Coordnat r of( liiOce design; Rick D. NOt:! COver desig ner: Sht!li(JitBorreu Co'•c:r ima.ge: Dt'CAlt/Jm mif:Jt�rtN.:esSI)r cltlp phologmplt, �nesy /tfidwellkn-idrm•. fh,it/(J Swte UnlwrsityNmiorwl 1/iglt Magnetir; f t:lr/ Lulwrow r. v i "

Composi1or: lmemctRoe Compositim• CorpomtiQ1t 'JYptft�te:: JOI121iJ�W Roman Printer: Qu(becQr %rid f'tlirfit:M, PA Library orCong.ras Cnllll(l�ln�·ln-Publkation Oaca Kang, Sung·�IO, 1945CMOS digital imeyatcd crcuits : analysis :md d�gn I Sung-Mo (Sit'�·c) Kang. Yusur i l

LeblebicL -3rd cd. p. c1n.
lnc:ludes biblk>y.tphie:tl references and indc:.x.

lSBN 0-07-24605�9- ISDN 0.00-119644-7 (ISE) 1. Metal oxide. semicondoctors. Complement.vy. 2. Digi1;d i.nc�rnted circuits. t Ublebid, Yu:suf. U. TiOe. TK7871.99.M44 K36 2003 621.39'5-dcll 2002026558 CIP

lNT'ERNATIONALEDITION ISBN 0-07-119644-7 Cop)'ri,a.hl 0 2003. Exclusi� tighLS byThe McGraw-Hill CompaniQ.. Inc., for mOlnuf;u.:ture ;tnd expcJrL 'lnil boot cannot be rt·C.XJIOC1cd from the ooontry towtaicb it i s llold by Mc.:Gr;,w.liill. The lntemation;•l Edilion1s nOi tl\'ilil:•ble ln Nanh An..eric :t... www.mhhe.com

Copyrighted Material

CONTENTS

PREFACE 1 INTRODUCTION 1.1 1.2 1.3 2 Historical Perspective Objective and Organization of the Book A Circuit Design Example

xi 1 1 5 8 20 20 21 29 37 40 44 45 47 48 52 55 66 81 97 110 111

FABRICATION OF MOSFETs 2.1 2.2 2.3 2.4 2.5 Introduction...
tracking img